Field-effect tunneling transistor based on vertical graphene heterostructures

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Author’s version preprint
Publication year
2012Author(s)
Number of pages
4 p.
Source
Science, 335, 6071, (2012), pp. 947-950ISSN
Publication type
Article / Letter to editor

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Organization
Theory of Condensed Matter
Journal title
Science
Volume
vol. 335
Issue
iss. 6071
Page start
p. 947
Page end
p. 950
Subject
Theory of Condensed MatterThis item appears in the following Collection(s)
- Academic publications [232002]
- Electronic publications [115251]
- Faculty of Science [34944]
- Open Access publications [82625]
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