Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy

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Publication year
2010
Author(s)
Ashraf, H.
Arshad, M.I.
Faraz, S.M.
Wahab, Q.
Hageman, P.R.
Asghar, M.
Number of pages
5 p.
Source
Journal of Applied Physics, 108, 10, (2010), pp. 103708
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DOI
Publication type
Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/84005   https://hdl.handle.net/2066/84005
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