Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates
Publication year
2010Author(s)
Number of pages
4 p.
Source
Diamond and Related Materials, 19, 5-6, (2010), pp. 437-440ISSN
Publication type
Article / Letter to editor
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Organization
Applied Materials Science
Applied Molecular Physics
Solid State Chemistry
Journal title
Diamond and Related Materials
Volume
vol. 19
Issue
iss. 5-6
Languages used
English (eng)
Page start
p. 437
Page end
p. 440
Subject
Applied Materials Science; Applied Molecular Physics; Solid State ChemistryThis item appears in the following Collection(s)
- Academic publications [244084]
- Electronic publications [131085]
- Faculty of Science [36993]
- Open Access publications [105126]
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