Interface state density of free-standing GaN Schottky diodes

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Publication year
2010
Author(s)
Faraz, S.M.
Ashraf, H.
Arshad, M.I.
Hageman, P.R.
Asghar, M.
Wahab, Q.
Number of pages
8 p.
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Semiconductor Science and Technology, 25, 9, (2010), pp. 095008
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Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/83399   https://hdl.handle.net/2066/83399
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