Interface state density of free-standing GaN Schottky diodes

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Title:	Interface state density of free-standing GaN Schottky diodes
Author(s):	Faraz, S.M.; Ashraf, H. ; Arshad, M.I.; Hageman, P.R. ; Asghar, M.; Wahab, Q.
Publication year:	2010
Source:	Semiconductor Science and Technology, vol. 25, iss. 9, (2010), pp. 095008
Number of Pages:	8 p.
ISSN:	0268-1242
Publication type:	Article / Letter to editor
Please use this identifier to cite or link to this item : http://hdl.handle.net/2066/83399
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Subject:	Applied Materials Science
Organization:	Applied Materials Science
Journal title:	Semiconductor Science and Technology
Volume:	vol. 25
Issue:	iss. 9
Page start:	p. 095008

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