On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes

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Publication year
2009Author(s)
Number of pages
7 p.
Source
Journal of Crystal Growth, 311, 23-24, (2009), pp. 4685-4691ISSN
Publication type
Article / Letter to editor

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Organization
Applied Materials Science
Solid State Chemistry
Applied Molecular Physics
Journal title
Journal of Crystal Growth
Volume
vol. 311
Issue
iss. 23-24
Page start
p. 4685
Page end
p. 4691
Subject
Applied Materials Science; Applied Molecular Physics; Solid State ChemistryThis item appears in the following Collection(s)
- Academic publications [234419]
- Electronic publications [117392]
- Faculty of Science [34584]
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