Influence of bismuth incorporation on the valence and conduction band edgeds of GaAs1-xBix
Publication year
2008Author(s)
Number of pages
3 p.
Source
Applied Physics Letters, 92, 26, (2008), pp. 262105-1-262105-3ISSN
Publication type
Article / Letter to editor

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Organization
Condensed Matter Science (HFML)
Soft Condensed Matter & Nanomaterials
Journal title
Applied Physics Letters
Volume
vol. 92
Issue
iss. 26
Page start
p. 262105-1
Page end
p. 262105-3
Subject
Correlated Electron Systems / High Field Magnet Laboratory (HFML)This item appears in the following Collection(s)
- Academic publications [234204]
- Electronic publications [117151]
- Faculty of Science [34558]
- Open Access publications [84184]
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