The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations

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Publication year
2004
Author(s)
Dam, C.E.C.
Grzegorczyk, A.P.
Hageman, P.R.
Dorsman, R.
Kleijn, C.R.
Larsen, P.K.
Source
Journal of Crystal Growth, 271, 1-2, (2004), pp. 192-199
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Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/60160   https://hdl.handle.net/2066/60160
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