Low dislocation density, high power InGaN laser diodes

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Publication year
2004
Author(s)
Perlin, P.
Leszczynski, M.
Prystawko, P.
Wisniewski, P.
Czernetzki, R.
Skierbiszewski, C.
Nowak, G.
Purgal, W.
Weyher, J.L.
Kamler, G.
Borysiuk, J.
Krysko, M.
Sarzynski, M.
Suski, T.
Litwin-Staszewska, E.
Dmowski, L.
Franssen, G.M.
Grzanka, S.
Swietlik, T.
Grzegory, I.
Bockowski, M.
Lucznik, B.
Porowski, S.
Gorczyca, L.
Bering, A.
Krupczynski, W.
Makarowa, I.
Wisniewska, R.
Libura, A.
Source
MRS Internet Journal of Nitride Semiconductor Research, 9, (2004), pp. 1-5, article 3
ISSN
DOI
Publication type
Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/57480   https://hdl.handle.net/2066/57480
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