Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates

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Publication year
2007
Author(s)
Pernot, J.
Bustarret, E.
Rudziński, M.
Hageman, P.R.
Larsen, P.K.
Source
Journal of Applied Physics, 101, 3, (2007), pp. 033536-033536-5
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Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/36503   https://hdl.handle.net/2066/36503
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