Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition

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Title:	Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition
Author(s):	Tengborn, E.; Rummukainen, M.; Tuomisto, F.; Saarinen, K.; Rudzinski, M. ; Hageman, P.R. ; Larsen, P.K. ; Nordlund, A.
Publication year:	2006
Source:	Applied Physics Letters, vol. 89, iss. 9, (2006), pp. 091905-1-091905-3
ISSN:	0003-6951
Publication type:	Article / Letter to editor
Please use this identifier to cite or link to this item : https://hdl.handle.net/2066/35900
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Subject:	Applied Materials Science
Organization:	Applied Materials Science
Journal title:	Applied Physics Letters
Volume:	vol. 89
Issue:	iss. 9
Page start:	p. 091905-1
Page end:	p. 091905-3

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