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Fulltext:
35900.pdf
Format:
PDF
Description:
publisher's version
Title:
Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition
Author(s):
Tengborn, E.
;
Rummukainen, M.
;
Tuomisto, F.
;
Saarinen, K.
;
Rudzinski, M.
;
Hageman, P.R.
;
Larsen, P.K.
;
Nordlund, A.
Publication year:
2006
Source:
Applied Physics Letters, vol. 89, iss. 9, (2006), pp. 091905-1-091905-3
ISSN:
0003-6951
Publication type:
Article / Letter to editor
Please use this identifier to cite or link to this item :
https://hdl.handle.net/2066/35900
Display more details
Subject:
Applied Materials Science
Organization:
Applied Materials Science
Journal title:
Applied Physics Letters
Volume:
vol. 89
Issue:
iss. 9
Page start:
p. 091905-1
Page end:
p. 091905-3
This item appears in the following Collection(s)
Faculty of Science
[28790]
Open Access publications
[55923]
Freely accessible full text publications
Electronic publications
[86152]
Freely accessible full text publications plus those not yet available due to embargo
Academic publications
[186209]
Academic output Radboud University
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