Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition

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Publication year
2006
Author(s)
Tengborn, E.
Rummukainen, M.
Tuomisto, F.
Saarinen, K.
Rudzinski, M.
Hageman, P.R.
Larsen, P.K.
Nordlund, A.
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Applied Physics Letters, 89, 9, (2006), pp. 091905-1-091905-3
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Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/35900   https://hdl.handle.net/2066/35900
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