Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition
Publication year
2006Source
Applied Physics Letters, 89, 9, (2006), pp. 091905-1-091905-3ISSN
Publication type
Article / Letter to editor

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Organization
Applied Materials Science
Journal title
Applied Physics Letters
Volume
vol. 89
Issue
iss. 9
Page start
p. 091905-1
Page end
p. 091905-3
Subject
Applied Materials ScienceThis item appears in the following Collection(s)
- Academic publications [226841]
- Electronic publications [108452]
- Faculty of Science [33955]
- Open Access publications [77617]
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