Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study
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Publication year
2005Source
Journal of Crystal Growth, 285, 1-2, (2005), pp. 31-40ISSN
Publication type
Article / Letter to editor
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Organization
Applied Materials Science
Journal title
Journal of Crystal Growth
Volume
vol. 285
Issue
iss. 1-2
Page start
p. 31
Page end
p. 40
Subject
Applied Materials ScienceThis item appears in the following Collection(s)
- Academic publications [245186]
- Electronic publications [132486]
- Faculty of Science [37457]
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