Thin-film GaAs epitaxial life-off solar cells for space applications
Publication year
2005Source
Progress in Photovoltaics. Research and Applications, 13, 7, (2005), pp. 587-596ISSN
Publication type
Article / Letter to editor
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Organization
Applied Materials Science
Human Genetics
Journal title
Progress in Photovoltaics. Research and Applications
Volume
vol. 13
Issue
iss. 7
Page start
p. 587
Page end
p. 596
Subject
Applied Materials ScienceAbstract
In the present work the space compatibility of thin-film GaAs solar cells is studied. These cells are separated from their GaAs substrate by the epitaxial lift-off (ELO) technique and mounted behind a CMG cover glass which at the same time serves as a stable carrier for the thin film cells. In the present initial stage of development these cells have an average efficiency of about 15.4% under AM0 illumination due to not yet optimized grid contacts and anti-reflection coatings. Inspection after irradiation by 1 MeV electrons, thermal vacuum and thermal cycling experiments reveal that degradation of the cells is largely due to delamination and micro-cracking. Based on these results, glass dehydration and adhesive degassing procedures are implemented in the ELO cell processing. As a consequence, even in this premature phase, newly produced cells show a, radiation hardness comparable to or better than that of commercially available GaAs cells on Ge substrates and are virtually unaffected by severe thermal cycling. Copyright (c) 2005 John Wiley & Sons, Ltd.
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- Faculty of Medical Sciences [93208]
- Faculty of Science [37522]
- Open Access publications [106128]
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