Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers
until further notice
SourceJournal of Crystal Growth, 282, 1-2, (2005), pp. 45-48
Article / Letter to editor
Display more detailsDisplay less details
Applied Materials Science
Journal of Crystal Growth
SubjectApplied Materials Science
Two different etching techniques were used for the investigation of polarity inversion in the magnesium-doped MOVPE GaN layers deposited on GaN pressure grown substrates. Etching in KOH solution at 100 degrees C and in molten bases at 450 degrees C allowed us to determine precisely the regions of different polarity. Chemically active N-polar GaN areas were removed leaving Ga-polar material intact. The results were confirmed by the TEM examination. (c) 2005 Elsevier B.V. All rights reserved.
Upload full text
Use your RU credentials (u/z-number and password) to log in with SURFconext to upload a file for processing by the repository team.