Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD

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Publication year
2005
Author(s)
Grzegorczyk, A.P.
Hageman, P.R.
Weyher, J.L.
Larsen, P.K.
Source
Journal of Crystal Growth, 283, 1-2, (2005), pp. 72-80
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Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/32637   https://hdl.handle.net/2066/32637
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