Probing the silicon-silicon oxide interface of Si(111)-SiO2-Cr MOS structures by DC-electric-field-induced second harmonic generation

Fulltext present in this item

Fulltext: 29614.pdf

Format: PDF

Description: publisher's version

Title:	Probing the silicon-silicon oxide interface of Si(111)-SiO2-Cr MOS structures by DC-electric-field-induced second harmonic generation
Author(s):	Aktsipetrov, O.A.; Fedyanin, A.A.; Mishina, E.D.; Rubtsov, A.N.; Hasselt, C.W. van; Devillers, M.A.C.; Rasing, T.H.M.
Publication year:	1996
Source:	Surface Science, vol. 352, (1996), pp. 1033-1037
Publisher:	Elsevier science bv
ISSN:	0039-6028
Publication type:	Article / Letter to editor
Please use this identifier to cite or link to this item : http://hdl.handle.net/2066/29614
Display more details
Organization:	Spectroscopy of Solids and Interfaces
Journal title:	Surface Science
Volume:	vol. 352
Page start:	p. 1033
Page end:	p. 1037
Languages used:	en

Academic publications [161591]
Academic output Radboud University
Open Access publications [45724]
Freely accessible full text publications
Electronic publications [71370]
Freely accessible full text publications plus those not yet available due to embargo
Faculty of Science [25051]