Dislocation structure and mobility in the layered semiconductor InSe: a first-principles study
Publication year
2021Source
2d Materials, 8, 4, (2021), pp. 1-8, article 045028ISSN
Publication type
Article / Letter to editor

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Organization
Theory of Condensed Matter
Journal title
2d Materials
Volume
vol. 8
Issue
iss. 4
Page start
p. 1
Page end
p. 8
Subject
Theory of Condensed MatterThis item appears in the following Collection(s)
- Academic publications [232165]
- Electronic publications [115400]
- Faculty of Science [34958]
- Open Access publications [82697]
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