Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

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Title:	Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon
Author(s):	Kh Zhukavin, R.; Pavlov, S.G.; Stavrias, N.; Saeedi, K.; Kovalevsky, K.A.; Phillips, P.J.; Dessmann, N.; Huebers, H.-W.; Shastin, V.N.
Publication year:	2020
Source:	Journal of Applied Physics, vol. 127, iss. 3, (2020), article 035706
ISSN:	0021-8979
DOI:	https://doi.org/10.1063/1.5134691
Publication type:	Article / Letter to editor
Please use this identifier to cite or link to this item : https://hdl.handle.net/2066/218199
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Subject:	FELIX Infrared and Terahertz Spectroscopy
Organization:	FELIX Facility FELIX Infrared and Terahertz Spectroscopy
Journal title:	Journal of Applied Physics
Volume:	vol. 127
Issue:	iss. 3
Article number:	035706

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