Preparation and properties of Pb(Zr, Ti)O3 films grown by metalorganic chemical vapor deposition
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Moret, Mona Pierrette Felicie
[S.l. : s.n.]
Number of pages
XIII, 185 p.
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The work described in this thesis is the result of four years research on Pb(Zr,Ti)O3 (PZT) thin films at the University of Nijmegen in the Experimental Solid State Physics III group. PZT materials are of high interest for their ultimate applications in thin film form. The two of main interest for our studies were micromechanical and optical devices based on their piezoelectric and electro-optic properties. The PZT layers were grown by MOCVD, Metalorganic Chemical Vapor Deposition. This specific vapor-phase growth technique is described in the thesis both generally and in the detailed context of the reactor used for this study. The structure, the morphology, and the optical properties of the grown layers were intensively analyzed with a variety of characterization techniques. Insight was gained into the complexities and subtleties of PZT growth in a classical horizontal MOCVD reactor. Careful analyses of the structure and morphology of typical MOCVD-grown PZT films were carried out, which should be helpful to future researchers. Additionally, the limits of the platinized silicon substrates for the growth of such films were clearly detailed. Domain formation and morphological analysis of hetero-epitaxial PZ layers on STO are described. Though PZT films are eventual candidates for optical devices further information about thin film optical properties is required. The refractive index of these MOCVD PZT hetero-epitaxial PZT layers was measured as a function of composition and wavelength.
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