Critical behavior of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs

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Publication year
2001
Author(s)
Fletcher, R.
Pudalov, V.M.
Radcliffe, A.D.B.
Possanzini, C.
Source
Semiconductor Science and Technology, 16, 5, (2001), pp. 386-393
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DOI
Publication type
Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/176052   https://hdl.handle.net/2066/176052
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