Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors
Publication year
2016Source
Physical Review Letters, 116, 18, (2016), pp. 5ISSN
Publication type
Article / Letter to editor

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Organization
Theory of Condensed Matter
Condensed Matter Science (HFML)
Journal title
Physical Review Letters
Volume
vol. 116
Issue
iss. 18
Page start
p. 5
Subject
Theory of Condensed MatterThis item appears in the following Collection(s)
- Academic publications [229037]
- Electronic publications [111424]
- Faculty of Science [34250]
- Open Access publications [80274]
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