TY  - JOUR
AU  - Weyher, J.L.
AU  - Brown, P.D.
AU  - Zauner, A.R.A.
AU  - Muller, S.
AU  - Boothroyd, C.B.
AU  - Foord, D.T.
AU  - Hageman, P.R.
AU  - Humphreys, C.J.
AU  - Larsen, P.K.
AU  - Grzegory, I.
AU  - Porowski, S.
PY  - 1999
UR  - https://hdl.handle.net/2066/112571
TI  - Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)
EP  - 428
SN  - 0022-0248
IS  - iss. 4
SP  - 419
JF  - Journal of Crystal Growth
VL  - vol. 204
DO  - https://doi.org/10.1016/S0022-0248(99)00217-1
ER  - 
TY  - JOUR
AU  - Bauhuis, G.J.
AU  - Hageman, P.R.
AU  - Larsen, P.K.
PY  - 1998
UR  - https://hdl.handle.net/2066/112572
TI  - Heavily doped p-type AlGaInP grown by metalorganic chemical vapor deposition
EP  - 318
SN  - 0022-0248
IS  - iss. 3
SP  - 313
JF  - Journal of Crystal Growth
VL  - vol. 191
DO  - https://doi.org/10.1016/S0022-0248(98)00136-5
ER  - 
TY  - JOUR
AU  - Hageman, P.R.
AU  - Bauhuis, G.J.
AU  - Olsthoorn, S.M.
PY  - 1998
UR  - https://hdl.handle.net/2066/112573
TI  - Influence of Ga precursor choice on ordering degree of MOVPE grown Ga0.5In0.5P
EP  - 275
SN  - 0022-0248
IS  - iss. 2
SP  - 272
JF  - Journal of Crystal Growth
VL  - vol. 194
DO  - https://doi.org/10.1016/S0022-0248(98)00653-8
ER  - 
TY  - JOUR
AU  - Hageman, P.R.
AU  - Nijenhuis, J. te
AU  - Anders, M.J.
AU  - Giling, L.J.
PY  - 1997
UR  - https://hdl.handle.net/2066/29449
PB  - Elsevier science bv
TI  - Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy
EP  - 275
SN  - 0022-0248
IS  - iss. 1-4
SP  - 270
JF  - Journal of Crystal Growth
VL  - vol. 170
L1  - https://repository.ubn.ru.nl/bitstream/handle/2066/29449/29449.pdf?sequence=1
ER  - 
TY  - JOUR
AU  - Vangeelen, A.
AU  - Hageman, P.R.
AU  - Bauhuis, G.J.
AU  - vanRijsingen, P.C.
AU  - Schmidt, P.
AU  - Giling, L.J.
PY  - 1997
UR  - https://hdl.handle.net/2066/112577
TI  - Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate
EP  - 171
SN  - 0921-5107
IS  - iss. 1-3
SP  - 162
JF  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
VL  - vol. 45
DO  - https://doi.org/10.1016/S0921-5107(96)02029-6
ER  - 
TY  - JOUR
AU  - Driessen, F.A.J.M.
AU  - Cheong, H.M.
AU  - Mascarenhas, A.
AU  - Deb, S.K.
AU  - Hageman, P.R.
AU  - Bauhuis, G.J.
AU  - Giling, L.J.
PY  - 1996
UR  - https://hdl.handle.net/2066/29293
TI  - Interface-induced conversion of infrared to visible light at semiconductor interfaces
EP  - R5266
SN  - 0163-1829
IS  - iss. 8
SP  - R5263
JF  - Physical Review. B, Condensed Matter
VL  - vol. 54
L1  - https://repository.ubn.ru.nl/bitstream/handle/2066/29293/29293.pdf?sequence=1
ER  - 
TY  - JOUR
AU  - Nijenhuis, J. te
AU  - Hageman, P.R.
AU  - Giling, L.J.
PY  - 1996
UR  - https://hdl.handle.net/2066/28311
TI  - Dependence of indium incorporation upon the substrate misorientation during growth of In(x)Ga(1)1-xAs by metalorganic vapour phase epitaxy
EP  - 405
SN  - 0022-0248
IS  - iss. 3-4
SP  - 397
JF  - Journal of Crystal Growth
VL  - vol. 167
L1  - https://repository.ubn.ru.nl/bitstream/handle/2066/28311/28311.pdf?sequence=1
ER  - 
TY  - JOUR
AU  - Driessen, F.A.J.M.
AU  - Hageman, P.R.
AU  - Olsthoorn, S.M.
AU  - Giling, L.J.
PY  - 1995
UR  - https://hdl.handle.net/2066/29294
TI  - Photoluminescence of Modulation-Doped Ordered Disordered Galnp(2) Homojunctions - Intrinsic Versus Extrinsic Emissions
EP  - 588
SN  - 0003-6951
IS  - iss. 5
SP  - 586
JF  - Applied Physics Letters
VL  - vol. 66
L1  - https://repository.ubn.ru.nl/bitstream/handle/2066/29294/29294.pdf?sequence=1
ER  - 
TY  - JOUR
AU  - Driessen, F.A.J.M.
AU  - Bauhuis, G.J.
AU  - Hageman, P.R.
AU  - Giling, L.J.
PY  - 1994
UR  - https://hdl.handle.net/2066/112583
TI  - 2-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED, ORDERED-DISORDERED GAINP2 HOMOJUNCTIONS
EP  - 716
SN  - 0003-6951
IS  - iss. 6
SP  - 714
JF  - Applied Physics Letters
VL  - vol. 65
DO  - https://doi.org/10.1063/1.112278
L1  - https://repository.ubn.ru.nl/bitstream/handle/2066/112583/112583.pdf?sequence=1
ER  - 
TY  - JOUR
AU  - Driessen, F.A.J.M.
AU  - Bauhuis, G.J.
AU  - Hageman, P.R.
AU  - Vangeelen, A.
AU  - Giling, L.J.
PY  - 1994
UR  - https://hdl.handle.net/2066/112584
TI  - ANISOTROPIC TRANSPORT-PROPERTIES OF THE 2-DIMENSIONAL ELECTRON-GAS IN ORDERED-DISORDERED GAINP2 HOMOJUNCTIONS - THE STRUCTURE OF ORDERED DOMAINS
EP  - 17110
SN  - 1098-0121
IS  - iss. 23
SP  - 17105
JF  - Physical Review. B, Condensed Matter and Materials Physics
VL  - vol. 50
DO  - https://doi.org/10.1103/PhysRevB.50.17105
L1  - https://repository.ubn.ru.nl/bitstream/handle/2066/112584/112584.pdf?sequence=1
ER  - 
TY  - JOUR
AU  - Hageman, P.R.
AU  - Driessen, F.
AU  - Bauhuis, G.J.
AU  - Giling, L.J.
PY  - 1994
UR  - https://hdl.handle.net/2066/112582
TI  - 2-DIMENSIONAL ELECTRON GASES IN LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXIALLY GROWN INGAP HOMOJUNCTIONS
EP  - 962
SN  - 0022-0248
IS  - iss. 1-4
SP  - 958
JF  - Journal of Crystal Growth
VL  - vol. 145
DO  - https://doi.org/10.1016/0022-0248(94)91171-1
L1  - https://repository.ubn.ru.nl/bitstream/handle/2066/112582/112582.pdf?sequence=1
ER  - 
TY  - JOUR
AU  - Hageman, P.R.
AU  - Vangeelen, A.
AU  - Gabrielse, W.
AU  - Bauhuis, G.J.
AU  - Giling, L.J.
PY  - 1992
UR  - https://hdl.handle.net/2066/112591
TI  - OPTICAL AND ELECTRICAL QUALITY OF INGAP GROWN ON GAAS WITH LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
EP  - 346
SN  - 0022-0248
IS  - iss. 1-2
SP  - 336
JF  - Journal of Crystal Growth
VL  - vol. 125
DO  - https://doi.org/10.1016/0022-0248(92)90347-L
L1  - https://repository.ubn.ru.nl/bitstream/handle/2066/112591/112591.pdf?sequence=1
ER  -