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Now showing items 1-50 of 266
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Zonnecelrendementen in perspectief 2009, Article / Letter to editor (Nederlands Tijdschrift voor Natuurkunde, vol. 75, iss. 02, (2009), pp. 36-39) -
Wafer reuse for repeated growth of iii-v solar cells Bauhuis, G.J. ; Mulder, P. ; Haverkamp, E.J.; Schermer, J.J. ; Bongers, M.H.F. ; Oomen, G.; Koestler, W.; Strobl, G.2010, Article / Letter to editor (Progress in Photovoltaics. Research and Applications, vol. 17, iss. 5, (2010), pp. 155-159) -
Ultra-thin, high performance tunnel junctions for III-V multijunction cells Bauhuis, G.J. ; Mulder, P.; Schermer, J.J.2014, Article / Letter to editor (Progress in Photovoltaics. Research and Applications, vol. 22, iss. 6, (2014), pp. 656-660)
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Tuning the surface state dimensionality of Cu nanostripes Lobo, J.; Michel, E.G.; Bachmann, A.R.; Speller, S.E. ; Kuntze, J.; Ortega, J.E.2004, Article / Letter to editor (Physical Review Letters, vol. 93, iss. 13, (2004), pp. 137602)
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Top edge facet development in asymmetric grooves Bastos, P.L.; Bongers, M.M.G.; Anders, M.J.; Schermer, J.J. ; Giling, L.J.1995, Article / Letter to editor (Surface Science, vol. 344, iss. 3, (1995), pp. L1275-L1279)
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Thin-film iii–v solar cells using epitaxial lift-off 2014, Part of book or chapter of book (Wang, X.; Wang, Z.M. (ed.), High-efficiency solar cells, pp. 623-643)
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Thin-film GaAs epitaxial life-off solar cells for space applications Schermer, J.J. ; Mulder, P.; Bauhuis, G.J. ; Larsen, P.K. ; Oomen, G.; Bongers, M.H.F.2005, Article / Letter to editor (Progress in Photovoltaics. Research and Applications, vol. 13, iss. 7, (2005), pp. 587-596)
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Thin film GaAs solar cells with increased quantum efficiency due to light reflection Bauhuis, G.J. ; Schermer, J.J. ; Mulder, P.; Voncken, M.M.J.; Larsen, P.K.2004, Article / Letter to editor (Solar Energy Materials and Solar Cells, vol. 83, iss. 1, (2004), pp. 81-90)
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Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy Hageman, P.R. ; Kirilyuk, V.; Corbeek, W.H.M.; Weyher, J.L. ; Lucznik, B.; Bockowski, M.; Porowski, S.; Muller, S.2003, Article / Letter to editor (Journal of Crystal Growth, vol. 255, iss. 3-4, (2003), pp. 241-249) -
Thick GaN layers grown by HVPE: Influence of the templates Ashraf, H. ; Weyher, J.L. ; Dreumel, G.W.G. van ; Gzregorzyck, A.; Hageman, P.R.2008, Article / Letter to editor (Journal of Crystal Growth, vol. 310, iss. 17, (2008), pp. 3957-3963)
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Theoretical review of series resistance determination methods for solar cells Bissels, G.M.M.W. ; Schermer, J.J. ; Asselbergs, M.A.H.; Haverkamp, E.J.; Mulder, P.; Bauhuis, G.J. ; Vlieg, E.2014, Article / Letter to editor (Solar Energy Materials and Solar Cells, vol. 130, (2014), pp. 605-614)
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The nucleation of HCl and Cl<sub>2</sub>-based HVPE GaN on mis-oriented sapphire substrates Bohnen, T. ; Dreumel, G.W.G. van ; Weyher, J.L. ; Enckevort, W.J.P. van ; Ashraf, H. ; De Jong, A.E.F.; Hageman, P.R. ; Vlieg, E.2010, Article / Letter to editor (Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 7, iss. 7-8, (2010), pp. 1749-1755)
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The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates Bohnen, T. ; Dreumel, G.W.G. van ; Weyher, J.L. ; Enckevort, W.J.P. van ; Ashraf, H. ; De Jong, A.E.F.; Hageman, P.R. ; Vlieg, E.2010, Article / Letter to editor (Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 7, iss. 7-8, (2010), pp. 1749-1755)
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The influence of InxGa1 xAs and GaAs1 yPy layers surrounding the AlAs release layer in the epitaxial lift-off Niftrik, A.T.J. van ; Bauhuis, G.J. ; Schermer, J.J. ; Deelen, J. van ; Mulder, P.; Larsen, P.K.2007, Article / Letter to editor (Crystal Growth & Design, vol. 7, iss. 12, (2007), pp. 2472-2480)
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The influence of free-carrier concentration on the PEC etching of GaN: a calibration with Raman spectroscopy Lewandowska, R.; Weyher, J.L. ; Kelly, J.J.; Konczewicz, L.; Lucznik, B.2007, Article / Letter to editor (Journal of Crystal Growth, vol. 307, iss. 2, (2007), pp. 298-301)
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The illumination angle dependency of CPV solar cell electrical performance Bunthof, L.A.A.; Bos-Coenraad, J.; Corbeek, W.H.M.; Vlieg, E. ; Schermer, J.J.2017, Article / Letter to editor (Solar Energy, vol. 144, (2017), pp. 166-174)
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The epitaxial Lift-Off Process: Parameter Studies and Solar Cell Application Voncken, M.M.J.2004, Dissertation
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The effects of nitrogen addition on flame deposition of diamond Stolk, R.L.; Herpen, M. van; Schermer, J.J. ; Meulen, J.J. ter2000, Article / Letter to editor (Proceedings of the Combustion Institute, vol. 28, (2000), pp. 1447-1454)
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The effect of nitrogen addition during flame deposition of diamond as studied by solid-state techniques Stolk, R.L.; Buijnsters, J.G. ; Schermer, J.J. ; Teofilov, N.; Sauer, R.; Fransen, M.J.; Meulen, J.J. ter2003, Article / Letter to editor (Diamond and Related Materials, vol. 12, iss. 8, (2003), pp. 1322-1334)
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The effect of nitriding on the diamond film characteristics on chromium substrates Buijnsters, J.G. ; Shankar, P.; Enckevort, W.J.P. van ; Schermer, J.J. ; Meulen, J.J. ter2002, Article / Letter to editor (Diamond and Related Materials, vol. 11, iss. 10, (2002), pp. 1760-1768)
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The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations Dam, C.E.C.; Grzegorczyk, A.P. ; Hageman, P.R. ; Dorsman, R.; Kleijn, C.R.; Larsen, P.K.2004, Article / Letter to editor (Journal of Crystal Growth, vol. 271, iss. 1-2, (2004), pp. 192-199)
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The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN Macht, L.; Weyher, J.L. ; Hageman, P.R. ; Zielinski, M.; Larsen, P.K.2002, Article / Letter to editor (Journal of Physics : Condensed Matter, vol. 14, iss. 48, (2002), pp. 13345-13350)
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The applicability of ultra thin silicon films as interlayers for CVD diamond deposition on steels Buijnsters, J.G. ; Shankar, P.; Enckevort, W.J.P. van ; Schermer, J.J. ; Meulen, J.J. ter2003, Article / Letter to editor (Physica Status Solidi A-Applied Research, vol. 195, iss. 2, (2003), pp. 383-395)
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The adhesion of hot-filament CVD diamond films on AISI type 316 austenitic stainless steel Buijnsters, J.G. ; Shankar, P.; Enckevort, W.J.P. van ; Schermer, J.J. ; Meulen, J.J. ter2004, Article / Letter to editor (Diamond and Related Materials, vol. 13, iss. 4-8, (2004), pp. 848-857)
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The adhesion of hot-filament CVD diamond films on AISI type 316 austenitic stainless steel Buijnsters, J.G. ; Shankar, P.; Enckevort, W.J.P. van ; Schermer, J.J. ; Meulen, J.J. ter2004, Article / Letter to editor (Diamond and Related Materials, vol. 13, iss. 4-8, (2004), pp. 848-857)
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Temperature-Induced Degradation of Thin-Film III-V Solar Cells for Space Applications Leest, R.H. van; Mulder, P.; Gruginskie, N.; Laar, S.C.W. van; Bauhuis, G.J. ; Cheun, H.; Lee, H.; Yoon, W.; van der Heijden, R.; Bongers, E.; Vlieg, E. ; Schermer, J.J. et al.2017, Article / Letter to editor (IEEE Journal of Photovoltaics, vol. 7, iss. 2, (2017), pp. 702-708)
sine al.
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Temperature-dependent facet development in the deposition of GaInP on non-planar surfaces Bastos, P.L.; Anders, M.J.; Bongers, M.M.G.; Schermer, J.J. ; Giling, L.J.1997, Article / Letter to editor (Surface Science, vol. 370, iss. 2-3, (1997), pp. 179-189)
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TEMPERATURE-DEPENDENCE OF SILICON DOPING OF GAAS BY SIH4 AND SI2H6 IN ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION Hageman, P.R. ; Tang, X.; Decroon, M.H.J.M.; Giling, L.J.1989, Article / Letter to editor (Journal of Crystal Growth, vol. 98, iss. 3, (1989), pp. 249-254)
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Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates Bastos, P.L.; Anders, M.J.; Bongers, M.M.G.; Hageman, P.R. ; Giling, L.J.1997, Article / Letter to editor (Journal of Crystal Growth, vol. 170, iss. 1-4, (1997), pp. 710-714)
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Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates Bastos, P.L.; Anders, M.J.; Bongers, M.M.G.; Hageman, P.R. ; Giling, L.J.1997, Article / Letter to editor (Journal of Crystal Growth, vol. 170, iss. 1-4, (1997), pp. 710-714)
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TEM observation of nanopipes in heteroepitaxial GaN Jezierska, E.; Weyher, J.L. ; Rudzinski, M. ; Borysiuk, J.2004, Article / Letter to editor (European Physical Journal-Applied Physics, vol. 27, iss. 1-3, (2004), pp. 255-258)
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Synchrotron radiation study of order in AlxGa1-xAs Niftrik, A.T.J. van ; Bauhuis, G.J. ; Schermer, J.J. ; Kim, H.; Voncken, M.M.J.; Mulder, P.; Larsen, P.K.2006, Article / Letter to editor (Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 246, iss. 1, (2006), pp. 96-100)
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Surface stabilization phenomena on flame-deposited diamond single crystals Schermer, J.J. ; Vanenckevort, W.J.P.; Giling, L.J.1996, Article / Letter to editor (Journal of Crystal Growth, vol. 166, iss. 1-4, (1996), pp. 622-627)
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Substrate reuse for epitaxial llift-off of III-V solar cellls Bauhuis, G.J. ; Mulder, P.; Haverkamp, E.J.; Schermer, J.J.2007, Article in monograph or in proceedings (Proc. 22nd European Photovoltaic Solar Energy Conf., pp. 106-110)
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Study of wet chemical etching of AlxGa1-xInP2 films using hydrochloric acid Deelen, J. van ; Mulder, P.; Bauhuis, G.J. ; Niftrik, A.T.J. van ; Haverkamp, E.; Schermer, J.J. ; Larsen, P.K.2006, Article / Letter to editor (Journal of the Electrochemical Society, vol. 153, iss. 6, (2006), pp. C442-C448)
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Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy Ashraf, H. ; Arshad, M.I.; Faraz, S.M.; Wahab, Q.; Hageman, P.R. ; Asghar, M.2010, Article / Letter to editor (Journal of Applied Physics, vol. 108, iss. 10, (2010), pp. 103708)
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Structure and morphology of epitaxial PbZrO3 films grown by metalorganic chemical vapor deposition Moret, M.P.; Schermer, J.J. ; Tichelaar, F.D.; Aret, E. ; Hageman, P.R.2002, Article / Letter to editor (Journal of Applied Physics, vol. 92, iss. 7, (2002), pp. 3947-3957)
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Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates Haffouz, S.; Grzegorczyk, A.; Hageman, P.R. ; Vennegues, P.; Drift, E. van der; Larsen, P.K.2003, Article / Letter to editor (Journal of Crystal Growth, vol. 248, (2003), pp. 568-572)
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Stripline as-75 nmr study of epitaxial iii-v semiconductor al0.5ga0.5as Goswami, M.; Knijn, P.J. ; Bauhuis, G.J. ; Janssen, J.W.G. ; Bentum, P.J.M. van ; Wijs, G.A. de ; Kentgens, A.P.M.2014, Article / Letter to editor (Journal of Physical Chemistry C, vol. 118, iss. 25, (2014), pp. 13394-13405)
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Strain-accelerated HF etching of AlAs for epitaxial lift-off Voncken, M.M.J.; Schermer, J.J. ; Bauhuis, G.J. ; Niftrik, A.T.J. van ; Larsen, P.K.2004, Article / Letter to editor (Journal of Physics : Condensed Matter, vol. 16, iss. 21, (2004), pp. 3585-3596)
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Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates Pernot, J.; Bustarret, E.; Rudziński, M.; Hageman, P.R. ; Larsen, P.K.2007, Article / Letter to editor (Journal of Applied Physics, vol. 101, iss. 3, (2007), pp. 033536-033536-5)
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Steps to minimize the characterization errors in steady state IV curve measurements taken wih C.O.T.S. Equipment Haverkamp, E.J.; Drozdowicz, Z.; Smith, A.; Mulder, P.; Bauhuis, G.J. ; Schermer, J.J. ; Bissels, G.M.M.W. ; Vlieg, E.2011, Article in monograph or in proceedings (37th IEEE Photovoltair Specialist Conference, Washington State Convention Center, Seattle, Washington, June 19-24, 2011, pp. 002262-002267)
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Step-Related Growth Phenomena on Exact and Misoriented {001} Surfaces of Cvd-Grown Single-Crystal Diamonds Enckevort, W.J.P. van ; Janssen, G.; Schermer, J.J. ; Giling, L.J.1995, Article / Letter to editor (Diamond and Related Materials, vol. 4, iss. 4, (1995), pp. 250-255)
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Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition 2005, Article / Letter to editor (Physical Review. B, Condensed Matter and Materials Physics, vol. 71, iss. 7, (2005), pp. 073309-1-073309-4)
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SPECTRUM AND BANDGAP OPTIMIZED ANTIREFLECTION COATING BY NUMERICAL SIMULATION Haverkamp, E.J.; Mulder, P.; Bauhuis, G.J. ; Schermer, J.J. ; Voncken, M.M.J.; Deelen, J. van; Niftrik, A.T.J. van ; Larsen, P.K.2005, Article in monograph or in proceedings (Palz, W. (ed.), 20th European Photovoltaic Solar Energy Conference, 6 – 10 June 2005, Barcelona, Spain, pp. 208-211)
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Spectroscopic ellipsometry on GaN: Comparison between hetero-epitaxial layers and bulk crystals Zauner, A.R.A.; Devillers, M.A.C.; Hageman, P.R. ; Larsen, P.K. ; Porowski, S.1998, Article / Letter to editor (MRS Internet Journal of Nitride Semiconductor Research, vol. 3, iss. 17, (1998), pp. art. no.-17)
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Space environmental testing of flexible coverglass alternatives based on siloxanes Smeenk, N.J.; Mooney, C.; Feenstra, J.; Mulder, P. ; Rohr, T.; Semprimoschnig, C.O.A.; Vlieg, E. ; Schermer, J.J.2013, Article / Letter to editor (Polymer Degradation and Stability, vol. 98, iss. 12, (2013), pp. 2503-2511)
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Solid-Liquid Interface Structure of Muscovite Mica in SrCl2 and BaCl2 Solutions Pintea, G.S.; Poel, W.B. de; Jong, A.E.F. de; Felici, Roberto; Vlieg, Elias2018, Article / Letter to editor (Langmuir, vol. 34, iss. 14, (2018), pp. 4241-4248)
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