Shift of the DX level in narrow Si delta-doped GaAs

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Publication year
1991Source
Semiconductor Science and Technology, 6, 10B, (1991), pp. 143-B145ISSN
Publication type
Article / Letter to editor

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Organization
Condensed Matter Science (HFML)
Journal title
Semiconductor Science and Technology
Volume
vol. 6
Issue
iss. 10B
Page start
p. 143
Page end
p. B145
Subject
Correlated Electron Systems / High Field Magnet Laboratory (HFML)This item appears in the following Collection(s)
- Academic publications [232155]
- Electronic publications [115359]
- Faculty of Science [34958]
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