Electron relaxation times in high-carrier-density GaAs-(Ga,Al)As heterojunctions
Publication year
1992Source
Physical Review. B, Condensed Matter and Materials Physics, 46, 16, (1992), pp. 10207-10214ISSN
Publication type
Article / Letter to editor

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Organization
Condensed Matter Science (HFML)
Journal title
Physical Review. B, Condensed Matter and Materials Physics
Volume
vol. 46
Issue
iss. 16
Page start
p. 10207
Page end
p. 10214
Subject
Correlated Electron Systems / High Field Magnet Laboratory (HFML)This item appears in the following Collection(s)
- Academic publications [229015]
- Electronic publications [111424]
- Faculty of Science [34247]
- Open Access publications [80274]
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