Subband population and electron subband mobility for two interacting Si-δ-doping layers in GaAs
Publication year
1993Source
Physica B - Condensed Matter, 184, 1-4, (1993), pp. 221-225ISSN
Publication type
Article / Letter to editor

Display more detailsDisplay less details
Organization
Condensed Matter Science (HFML)
Journal title
Physica B - Condensed Matter
Volume
vol. 184
Issue
iss. 1-4
Page start
p. 221
Page end
p. 225
Subject
Correlated Electron Systems / High Field Magnet Laboratory (HFML)This item appears in the following Collection(s)
- Academic publications [202799]
- Electronic publications [100870]
- Faculty of Science [31860]
- Open Access publications [69590]
Upload full text
Use your RU credentials (u/z-number and password) to log in with SURFconext to upload a file for processing by the repository team.