Subband population and electron subband mobility for two interacting Si-δ-doping layers in GaAs

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Title:	Subband population and electron subband mobility for two interacting Si-δ-doping layers in GaAs
Author(s):	Koenraad, P.M.; Heessels, A.C.L.; Blom, F.A.P.; Perenboom, J.A.A.J. ; Wolter, J.H.
Publication year:	1993
Source:	Physica B - Condensed Matter, vol. 184, iss. 1-4, (1993), pp. 221-225
ISSN:	0921-4526
DOI:	http://dx.doi.org/10.1016/0921-4526(93)90353-8
Publication type:	Article / Letter to editor
Please use this identifier to cite or link to this item : https://hdl.handle.net/2066/112798
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Subject:	Correlated Electron Systems / High Field Magnet Laboratory (HFML)
Organization:	Condensed Matter Science (HFML)
Journal title:	Physica B - Condensed Matter
Volume:	vol. 184
Issue:	iss. 1-4
Page start:	p. 221
Page end:	p. 225

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