High rate epitaxial lift-off of InGaP films from GaAs substrates
Publication year
2000Source
Applied Physics Letters, 76, 15, (2000), pp. 2131-2133ISSN
Publication type
Article / Letter to editor

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Organization
Applied Materials Science
Solid State Chemistry
Journal title
Applied Physics Letters
Volume
vol. 76
Issue
iss. 15
Page start
p. 2131
Page end
p. 2133
Subject
Applied Materials ScienceThis item appears in the following Collection(s)
- Academic publications [202738]
- Electronic publications [100840]
- Faculty of Science [31843]
- Open Access publications [69566]
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