Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

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Publication year
2002
Author(s)
Zauner, A.R.A.
Aret, E.
Enckevort, W.J.P. van
Weyher, J.L.
Porowski, S.
Schermer, J.J.
Source
Journal of Crystal Growth, 240, 1-2, (2002), pp. 14-21
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Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/112615   https://hdl.handle.net/2066/112615
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