TEMPERATURE-DEPENDENCE OF SILICON DOPING OF GAAS BY SIH4 AND SI2H6 IN ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

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Publication year
1989
Author(s)
Hageman, P.R.
Tang, X.
Decroon, M.H.J.M.
Giling, L.J.
Source
Journal of Crystal Growth, 98, 3, (1989), pp. 249-254
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Publication type
Article / Letter to editor
If a DOI or any other persistent identifier is unavailable, please use the following repository identifier to link to this item: https://hdl.handle.net/2066/112595   https://hdl.handle.net/2066/112595
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