PRESSURE AND TEMPERATURE-DEPENDENCE OF SILICON DOPING OF GAAS USING SI2H6 IN METALORGANIC CHEMICAL VAPOR-DEPOSITION

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Publication year
1992
Author(s)
Hageman, P.R.
Decroon, M.
Reek, J.N.H.
Giling, L.J.
Source
Journal of Crystal Growth, 116, 1-2, (1992), pp. 169-177
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Publication type
Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/112592   https://hdl.handle.net/2066/112592
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