Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy

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Publication year
1997
Author(s)
Hageman, P.R.
Tenijenhuis, J.
Anders, M.J.
Giling, L.J.
Source
Journal of Crystal Growth, 170, 1-4, (1997), pp. 270-275
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Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/112576   https://hdl.handle.net/2066/112576
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