An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD

Publication year

1999

Author(s)

Theije, F.K. de

Enckevort, W.J.P. van

Source

Journal of Crystal Growth, 197, 1-2, (1999), pp. 37-47

ISSN

DOI

https://doi.org/10.1016/S0022-0248(98)00954-3

Publication type

Article / Letter to editor

Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/112569

https://hdl.handle.net/2066/112569

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