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Title: A study on the silane doping of hetero-epitaxial MOCVD grown GaN
Author(s): Hageman, P.R. ; Devillers, M.A.C.; Zauner, A.R.A.; Kirilyuk, V.; Bouwens, W.S.; Crane, R.C.M.; Larsen, P.K.
Publication year: 1999
Source: Physica Status Solidi. B, Basic Research, vol. 216, iss. 1, (1999), pp. 609-613
ISSN: 0370-1972
DOI: http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<609
Publication type: Article / Letter to editor

Please use this identifier to cite or link to this item : http://hdl.handle.net/2066/112568   http://hdl.handle.net/2066/112568

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Organization: Applied Materials Science
Journal title:
Physica Status Solidi. B, Basic Research
Volume: vol. 216
Issue: iss. 1
Page start: p. 609
Page end: p. 613

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