Homo-epitaxial growth on misoriented GaN substrates by MOCVD

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Publication year
2000
Author(s)
Zauner, A.R.A.
Schermer, J.J.
Enckevort, W.J.P. van
Kirilyuk, V.
Weyher, J.
Grzegory, I.
Hageman, P.R.
Larsen, P.K.
Source
MRS Internet Journal of Nitride Semiconductor Research, 5, S1, (2000), pp. 425-431
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Publication type
Article / Letter to editor
If a DOI or any other persistent identifier is unavailable, please use the following repository identifier to link to this item: https://hdl.handle.net/2066/112563   https://hdl.handle.net/2066/112563
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