Highly chemical reactive ion etching of gallium nitride

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Publication year
2000
Author(s)
Karouta, F.
Jacobs, B
Moerman, I.
Jacobs, K.
Weyher, J.L.
Porowski, S.
Crane, R.
Hageman, P.R.
Source
MRS Internet Journal of Nitride Semiconductor Research, 5, (2000), pp. art. no.-W11.76
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DOI
Publication type
Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/112561   https://hdl.handle.net/2066/112561
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