Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities
Publication year
2000Source
Applied Physics Letters, 76, 17, (2000), pp. 2355-2357ISSN
Publication type
Article / Letter to editor

Display more detailsDisplay less details
Organization
Soft Condensed Matter & Nanomaterials
Applied Materials Science
Journal title
Applied Physics Letters
Volume
vol. 76
Issue
iss. 17
Page start
p. 2355
Page end
p. 2357
Subject
Applied Materials Science; Correlated Electron Systems / High Field Magnet Laboratory (HFML)This item appears in the following Collection(s)
- Academic publications [229016]
- Electronic publications [111213]
- Faculty of Science [34247]
- Open Access publications [80090]
Upload full text
Use your RU credentials (u/z-number and password) to log in with SURFconext to upload a file for processing by the repository team.