Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN
Publication year
2001Source
Journal of Applied Physics, 90, 12, (2001), pp. 6105-6109ISSN
Publication type
Article / Letter to editor

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Organization
Applied Materials Science
Journal title
Journal of Applied Physics
Volume
vol. 90
Issue
iss. 12
Page start
p. 6105
Page end
p. 6109
This item appears in the following Collection(s)
- Academic publications [229037]
- Electronic publications [111437]
- Faculty of Science [34250]
- Open Access publications [80287]
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