Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy
Publication year
2001Source
Applied Physics Letters, 79, 25, (2001), pp. 4109-4111ISSN
Publication type
Article / Letter to editor

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Organization
Applied Materials Science
Soft Condensed Matter & Nanomaterials
Journal title
Applied Physics Letters
Volume
vol. 79
Issue
iss. 25
Page start
p. 4109
Page end
p. 4111
Subject
Applied Materials Science; Correlated Electron Systems / High Field Magnet Laboratory (HFML); Soft Condensed Matter & Nanomaterials (HFML)This item appears in the following Collection(s)
- Academic publications [229339]
- Electronic publications [111770]
- Faculty of Science [34332]
- Open Access publications [80525]
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