Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition

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Publication year
2008
Author(s)
Grzegorczyk, A.P.
Weyher, J.L.
Hageman, P.R.
Larsen, P.K.
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Thin Solid Films, 516, 8, (2008), pp. 2314-2320
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Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/112553   https://hdl.handle.net/2066/112553
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