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Title: Improvement of the optical and structural properties of MOCVD grown GaN on sapphire by an in-situ SiN treatment
Author(s): Hageman, P.R. ; Haffouz, S.; Kirilyuk, V.; Macht, L.; Weyher, J.L. ; Grzegorczyk, A.; Larsen, P.K.
Publication year: 2001
Source: Physica Status Solidi A-Applied Research, vol. 188, iss. 2, (2001), pp. 659-662
ISSN: 0031-8965
DOI: http://dx.doi.org/10.1002/1521-396x(200112)188:2<659
Publication type: Article / Letter to editor

Please use this identifier to cite or link to this item : http://hdl.handle.net/2066/112552   http://hdl.handle.net/2066/112552

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Subject: Applied Materials Science
Organization: Applied Materials Science
Journal title:
Physica Status Solidi A-Applied Research
Volume: vol. 188
Issue: iss. 2
Page start: p. 659
Page end: p. 662

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