Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

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Publication year
2003
Author(s)
Haffouz, S.
Grzegorczyk, A.
Hageman, P.R.
Vennegues, P.
Drift, E. van der
Larsen, P.K.
Source
Journal of Crystal Growth, 248, (2003), pp. 568-572
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DOI
Publication type
Article / Letter to editor
Please use this identifier to cite or link to this item: https://hdl.handle.net/2066/112543   https://hdl.handle.net/2066/112543
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