Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy
Publication year
2003Source
Applied Physics Letters, 83, 1, (2003), pp. 66-68ISSN
Publication type
Article / Letter to editor
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Organization
Applied Materials Science
Journal title
Applied Physics Letters
Volume
vol. 83
Issue
iss. 1
Page start
p. 66
Page end
p. 68
This item appears in the following Collection(s)
- Academic publications [243859]
- Electronic publications [130610]
- Faculty of Science [36904]
- Open Access publications [104922]
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