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Browsing by Author "Weyher, J.L."
Now showing items 1-49 of 49
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The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates Bohnen, T. ; Dreumel, G.W.G. van ; Weyher, J.L. ; Enckevort, W.J.P. van ; Ashraf, H. ; De Jong, A.E.F.; Hageman, P.R. ; Vlieg, E.2010, Article / Letter to editor (Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 7, iss. 7-8, (2010), pp. 1749-1755) -
The nucleation of HCl and Cl<sub>2</sub>-based HVPE GaN on mis-oriented sapphire substrates Bohnen, T. ; Dreumel, G.W.G. van ; Weyher, J.L. ; Enckevort, W.J.P. van ; Ashraf, H. ; De Jong, A.E.F.; Hageman, P.R. ; Vlieg, E.2010, Article / Letter to editor (Physica Status Solidi (C) Current Topics in Solid State Physics, vol. 7, iss. 7-8, (2010), pp. 1749-1755)
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Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE Bohnen, T. ; Ashraf, H. ; Dreumel, G.W.G. van ; Weyher, J.L. ; Hageman, P.R. ; Vlieg, E. ; Verhagen, Sjoerd2010, Article / Letter to editor (Journal of Crystal Growth, vol. 312, iss. 18, (2010), pp. 2542-2550)
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Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism Ashraf, H. ; Kudrawiec, R.; Weyher, J.L. ; Serafinczuk, J.; Misiewicz, J.; Hageman, P.R.2010, Article / Letter to editor (Journal of Crystal Growth, vol. 312, iss. 4, (2010), pp. 595-600)
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Reduction of dislocation density in epitaxial gan layers bij overgrowth of defect-related etch pits 2009, Article / Letter to editor (Applied Physics Letters, vol. 95, (2009), pp. 031913) -
Thick GaN layers grown by HVPE: Influence of the templates Ashraf, H. ; Weyher, J.L. ; Dreumel, G.W.G. van ; Gzregorzyck, A.; Hageman, P.R.2008, Article / Letter to editor (Journal of Crystal Growth, vol. 310, iss. 17, (2008), pp. 3957-3963)
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Photoelectrochemistry and Etching of SiC: a Comparison with Si Kelly, J.J.; Dorp, D.H. van; Weyher, J.L.2008, Article in monograph or in proceedings (ESC Transactions, pp. 513-524)
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Influence of sapphire annealing in trimethylaluminum atmosphere on GaN epitaxy by MOCVD 2008, Article / Letter to editor (Thin Solid Films, vol. 516, iss. 8, (2008), pp. 2314-2320)
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Influence of sapphire annealing in a trimethylaluminum atmosphere on GaN epitaxy by metal-organic chemical vapor deposition 2008, Article / Letter to editor (Thin Solid Films, vol. 516, iss. 8, (2008), pp. 2314-2320)
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Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates Rudzinski, M. ; Jezierska, E.; Weyher, J.L. ; Macht, L.; Hageman, P.R. ; Borysiuk, J.; Rodle, T.C.; Jos, H.F.F.; Larsen, P.K.2007, Article / Letter to editor (Physica Status Solidi A-Applied Research, vol. 204, iss. 12, (2007), pp. 4230-4240) -
Defect-selective etching of semiconductors Weyher, J.L. ; Kelly, J.J.2007, Article in monograph or in proceedings (Handbook of Semiconductors, pp. 366-368)
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Orthodox etching of HVPE-grown GaN Weyher, J.L. ; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar, R.J.; Müller, S.; Sivel, V.G.M.; Nowak, G.; Grzegory, I.2007, Article / Letter to editor (Journal of Crystal Growth, vol. 305, iss. 2, (2007), pp. 384-392)
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L’erosion nanoscopique Montgomery, P.C.; Weyher, J.L. ; Gex, Omniscience, “”, . Ed. Jean-Pierre2007, Part of book or chapter of book (Voir L’invisible, pp. 60-61)
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The influence of free-carrier concentration on the PEC etching of GaN: a calibration with Raman spectroscopy Lewandowska, R.; Weyher, J.L. ; Kelly, J.J.; Konczewicz, L.; Lucznik, B.2007, Article / Letter to editor (Journal of Crystal Growth, vol. 307, iss. 2, (2007), pp. 298-301)
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Anodic etching of SiC in alkaline solutions Dorp, D.H. van; Weyher, J.L. ; Kelly, J.J.; Micromech, J.2007, Article / Letter to editor (Journal of Micromechanics and Microengineering : Structures, Devices, and Systems, vol. 17, iss. 4, (2007), pp. S50-S55)
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Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates Rudzinski, M. ; Jezierska, E.; Weyher, J.L. ; Macht, L.; Hageman, P.R. ; Borysiuk, J.; Rodle, T.C.; Jos, H.F.F.; Larsen, P.K.2007, Article / Letter to editor (Physica Status Solidi A-Applied Research, vol. 204, iss. 12, (2007), pp. 4230-4240)
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Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods 2006, Article / Letter to editor (Superlattices and Microstructures, vol. 40, iss. 4-6, (2006), pp. 279-288)
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Etching, Raman and PL study of thick HVPE-grown GaN Weyher, J.L. ; Lewandowska, R.; Macht, L.J. ; Lucznik, B.; Grzegory, I.2006, Article / Letter to editor (Materials Science in Semiconductor Processing, vol. 9, iss. 1-3, (2006), pp. 175-179)
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Selective etching of dislocations in violet-laser diode structures Kamler, G.; Smalc, J.; Wozniak, M. ; Weyher, J.L. ; Czernecki, R.; Targowski, G.; Leszczynski, M.; Grzegory, I.; Porowski, S.2006, Article / Letter to editor (Journal of Crystal Growth, vol. 293, iss. 1, (2006), pp. 18-21)
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An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology Macht, L.J. ; Kelly, J.J.; Weyher, J.L. ; Grzegorczyk, A.P. ; Larsen, P.K.2005, Article / Letter to editor (Journal of Crystal Growth, vol. 273, iss. 3-4, (2005), pp. 347-356)
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Growth of AlN, GaN and InN from the solution Krukowski, S.; Grzegory, I.; Bockowski, M.; Lucznik, B.; Suski, T.; Nowak, G.; Borysiuk, J.; Wroblewski, M.; Leszczynski, M.; Perlin, P.; Porowski, S.; Weyher, J.L. et al.2005, Article / Letter to editor (International Journal of Materials & Product Technology, vol. 22, iss. 1-3, (2005), pp. 226-261)
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Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD 2005, Article / Letter to editor (Journal of Crystal Growth, vol. 273, iss. 3-4, (2005), pp. 424-430)
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Defects in GaN single crystals and homoepitaxial structures Weyher, J.L. ; Kamler, G.; Nowak, G.; Borysiuk, J.; Lucznik, B.; Krysko, M.; Grzegory, I.; Porowski, S.2005, Article / Letter to editor (Journal of Crystal Growth, vol. 281, iss. 1, (2005), pp. 135-142)
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Defect-selective etching of SiC Weyher, J.L. ; Lazar, S.; Borysiuk, J.; Pernot, J.2005, Article / Letter to editor (Physica Status Solidi A-Applied Research, vol. 202, iss. 4, (2005), pp. 578-583)
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Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers Kamler, G.; Borysiuk, J.; Weyher, J.L. ; Czernecki, R.; Leszczynski, M.; Grzegory, I.; Porowski, S.2005, Article / Letter to editor (Journal of Crystal Growth, vol. 282, iss. 1-2, (2005), pp. 45-48)
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Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD 2005, Article / Letter to editor (Journal of Crystal Growth, vol. 283, iss. 1-2, (2005), pp. 72-80)
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Electrochemistry and etching of wide bandgap chemically resistant semiconductors J.J. Kelly, .; Macht, L.J. ; van Dorp, D.H.; Kooijman, M.R.; Weyher, J.L.2005, Article / Letter to editor (Electrochemical Society Proceedings, vol. 4, (2005), pp. 138-146)
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Revealing of defects in CdTe crystals by DSL etching Bissoli, F.; Weyher, J.L. ; Zappettini, A.; Zha, M.; Zanotti, L.2005, Article / Letter to editor (Crystal Research and Technology, vol. 40, iss. 10-11, (2005), pp. 1060-1063)
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Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition 2005, Article / Letter to editor (Physical Review. B, Condensed Matter and Materials Physics, vol. 71, iss. 7, (2005), pp. 073309-1-073309-4)
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Nanopipes in GaN: photo-etching and TEM study Lazar, S.; Weyher, J.L. ; Macht, L.J. ; Tichelaar, F.D.; Zandbergen, H.W.2004, Article / Letter to editor (European Physical Journal-Applied Physics, vol. 27, iss. 1-3, (2004), pp. 275-278)
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Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures Kamler, G.; Borysiuk, J.; Weyher, J.L. ; Presz, A.; Wozniak, M. ; Grzegory, I.2004, Article / Letter to editor (European Physical Journal-Applied Physics, vol. 27, iss. 1-3, (2004), pp. 247-249)
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Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods 2004, Article / Letter to editor (European Physical Journal-Applied Physics, vol. 27, iss. 1-3, (2004), pp. 37-41)
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TEM observation of nanopipes in heteroepitaxial GaN Jezierska, E.; Weyher, J.L. ; Rudzinski, M. ; Borysiuk, J.2004, Article / Letter to editor (European Physical Journal-Applied Physics, vol. 27, iss. 1-3, (2004), pp. 255-258)
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Low dislocation density, high power InGaN laser diodes Perlin, P.; Leszczynski, M.; Prystawko, P.; Wisniewski, P.; Czernetzki, R.; Skierbiszewski, C.; Nowak, G.; Purgal, W.; Weyher, J.L. ; Kamler, G.; Borysiuk, J.; Krysko, M.; Sarzynski, M.; Suski, T.; Litwin-Staszewska, E.; Dmowski, L.; Franssen, G.M. ; Grzanka, S.; Swietlik, T.; Grzegory, I.; Bockowski, M.; Lucznik, B.; Porowski, S.; Gorczyca, L.; Bering, A.; Krupczynski, W.; Makarowa, I.; Wisniewska, R.; Libura, A. et al.2004, Article / Letter to editor (MRS Internet Journal of Nitride Semiconductor Research, vol. 9, iss. Article 3, (2004))
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Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate Haffouz, S.; Hageman, P.R. ; Kirilyuk, V.; Macht, L.; Weyher, J.L. ; Larsen, P.K.2003, Article / Letter to editor (Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 97, iss. 1, (2003), pp. 9-12)
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Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy Hageman, P.R. ; Kirilyuk, V.; Corbeek, W.H.M.; Weyher, J.L. ; Lucznik, B.; Bockowski, M.; Porowski, S.; Muller, S.2003, Article / Letter to editor (Journal of Crystal Growth, vol. 255, iss. 3-4, (2003), pp. 241-249)
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Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology Zauner, A.R.A.; Aret, E. ; Enckevort, W.J.P. van ; Weyher, J.L. ; Porowski, S.; Schermer, J.J.2002, Article / Letter to editor (Journal of Crystal Growth, vol. 240, iss. 1-2, (2002), pp. 14-21)
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The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN Macht, L.; Weyher, J.L. ; Hageman, P.R. ; Zielinski, M.; Larsen, P.K.2002, Article / Letter to editor (Journal of Physics : Condensed Matter, vol. 14, iss. 48, (2002), pp. 13345-13350)
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Complementary study of defects in GaN by photo-etching and TEM Weyher, J.L. ; Macht, L.; Tichelaar, F.D.; Zandbergen, H.W.; Hageman, P.R. ; Larsen, P.K.2002, Article / Letter to editor (Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol. 91, (2002), pp. 280-284)
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Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment Haffouz, S.; Kirilyuk, V.; Hageman, P.R. ; Macht, L.; Weyher, J.L. ; Larsen, P.K.2001, Article / Letter to editor (Applied Physics Letters, vol. 79, iss. 15, (2001), pp. 2390-2392)
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Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN Weyher, J.L. ; Tichelaar, F.D.; Zandbergen, H.W.; Macht, L.; Hageman, P.R.2001, Article / Letter to editor (Journal of Applied Physics, vol. 90, iss. 12, (2001), pp. 6105-6109)
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Improvement of the optical and structural properties of MOCVD grown GaN on sapphire by an in-situ SiN treatment Hageman, P.R. ; Haffouz, S.; Kirilyuk, V.; Macht, L.; Weyher, J.L. ; Grzegorczyk, A.; Larsen, P.K.2001, Article / Letter to editor (Physica Status Solidi A-Applied Research, vol. 188, iss. 2, (2001), pp. 659-662)
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Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates Kirilyuk, V.; Zauner, A.R.A.; Christianen, P.C.M. ; Weyher, J.L. ; Hageman, P.R. ; Larsen, P.K.2001, Article / Letter to editor (Journal of Crystal Growth, vol. 230, iss. 3-4, (2001), pp. 477-480)
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Investigation of optical and structural properties of GaN grown by hydride vapor-phase epitaxy Kirilyuk, V.; Hageman, P.R. ; Christianen, P.C.M. ; Corbeek, W.H.M.; Zielinski, M.; Macht, L.; Weyher, J.L. ; Larsen, P.K.2001, Article / Letter to editor (Physica Status Solidi A-Applied Research, vol. 188, iss. 1, (2001), pp. 473-476)
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Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation Zauner, A.R.A.; Weyher, J.L. ; Plomp, M.; Kirilyuk, V.; Grzegory, I.; Enckevort, W.J.P. van ; Schermer, J.J. ; Hageman, P.R. ; Larsen, P.K.2000, Article / Letter to editor (Journal of Crystal Growth, vol. 210, iss. 4, (2000), pp. 435-443)
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Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities Kirilyuk, V.; Zauner, A.R.A.; Christianen, P.C.M. ; Weyher, J.L. ; Hageman, P.R. ; Larsen, P.K.2000, Article / Letter to editor (Applied Physics Letters, vol. 76, iss. 17, (2000), pp. 2355-2357)
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Highly chemical reactive ion etching of gallium nitride Karouta, F.; Jacobs, B; Moerman, I.; Jacobs, K.; Weyher, J.L. ; Porowski, S.; Crane, R.; Hageman, P.R.2000, Article / Letter to editor (MRS Internet Journal of Nitride Semiconductor Research, vol. 5, (2000), pp. art. no.-W11.76)
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Inversion domain nucleation in homoepitaxial GaN Brown, P.D.; Weyher, J.L. ; Boothroyd, C.B.; Foord, D.T.; Zauner, A.R.A.; Hageman, P.R. ; Larsen, P.K. ; Bockowski, M.; Humphreys, C.J.1999, Part of book or chapter of book (Cullis, A.G.; Beanland, R. (ed.), Secondary Inversion domain nucleation in homoepitaxial GaN, pp. 381-384)
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Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD) Weyher, J.L. ; Brown, P.D.; Zauner, A.R.A.; Muller, S.; Boothroyd, C.B.; Foord, D.T.; Hageman, P.R. ; Humphreys, C.J.; Larsen, P.K. ; Grzegory, I.; Porowski, S. et al.1999, Article / Letter to editor (Journal of Crystal Growth, vol. 204, iss. 4, (1999), pp. 419-428)
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