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Full Text	Issue Date	Title	Author(s)
	2011	Contactless electroreflectance of algan/gan heterostructures deposited on c-, a-, m-, and (20.1)-plane gan bulk substrates grown by ammonothermal method	Kudrawiec, R.; Rudzinski, M.; Gladysiewicz, M.; Janicki, L.; Hageman, P.R.; Strupinski, W.; Misiewicz, J.; Kucharski, R.; Zajac, M.; Doradzinski, R.; Dwilinski, R.
	2008	GaN grown on SiC by MOCVD: Material for HEMT applications	Rudzinski, M.
	2007	Screening effect in contactless elecrtoreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas	Motyka, M.; Kudrawiec, R.; Syperek, M.; Misiewics, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2007	Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates	Pernot, J.; Bustarret, E.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2007	Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates	Rudzinski, M.; Jezierska, E.; Weyher, J.L.; Macht, L.; Hageman, P.R.; Borysiuk, J.; Rodle, T.C.; Jos, H.F.F.
	2007	Investigation of built-in electric fields in AlGaN/GaN heterostructures grown on misoriented 4H-SiC substrate by contactless electroreflectance	Syperek, M.; Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2006	Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition	Tengborn, E.; Rummukainen, M.; Tuomisto, F.; Saarinen, K.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.; Nordlund, A.
	2006	Investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy	Motyka, M.; Syperek, M.; Kudrawiec, R.; Misiewicz, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2006	Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers	Desmaris, V.; Rudzinski, M.; Rorsman, N.; Hageman, P.R.; Larsen, P.K.; Zirath, H.; Rodle, T.C.; Jos, H.F.F.
	2005	Photoreflectance investigations of a donor-related transition in AlGaN/GaN transistor structures	Kudrawiec, R.; Syperek, M.; Misiewicz, J.; Rudzinski, M.; Grezegorczyk, A.P.; Hageman, P.R.; Larsen, P.K.
	2005	Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC	Ochalski, T.J.; Grzegorczyk, A.P.; Rudzinski, M.; Larsen, P.K.; Holtz, P.O.; Bergman, P.; Paskov, P.P.
	2005	Resistivity control of unintentionally doped GaN films	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Rudzinski, M.; Larsen, P.K.
	2005	Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD	Rudzinski, M.; Hageman, P.R.; Grzegorczyk, A.P.; Macht, L.J.; Rodle, T.C.; Jos, H.F.F.; Larsen, P.K.
	2004	TEM observation of nanopipes in heteroepitaxial GaN	Jezierska, E.; Weyher, J.L.; Rudzinski, M.; Borysiuk, J.

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