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Full Text	Issue Date	Title	Author(s)
	2010	Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism	Ashraf, H.; Kudrawiec, R.; Weyher, J.L.; Serafinczuk, J.; Misiewicz, J.; Hageman, P.R.
	2010	Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE	Bohnen, T.; Ashraf, H.; Dreumel, G.W.G. van; Weyher, J.L.; Hageman, P.R.; Vlieg, E.; Verhagen, Sjoerd
	2010	The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates	Bohnen, T.; Dreumel, G.W.G. van; Weyher, J.L.; Enckevort, W.J.P. van; Ashraf, H.; Jong, A.E.F. de; Hageman, P.R.; Vlieg, E.
	2010	The nucleation of HCl and Cl<sub>2</sub>-based HVPE GaN on mis-oriented sapphire substrates	Bohnen, T.; Dreumel, G.W.G. van; Weyher, J.L.; Enckevort, W.J.P. van; Ashraf, H.; Jong, A.E.F. de; Hageman, P.R.; Vlieg, E.
	2009	Reduction of dislocation density in epitaxial gan layers bij overgrowth of defect-related etch pits	Weyher, J.L.; Ashraf, H.; Hageman, P.R.
	2008	Photoelectrochemistry and Etching of SiC: a Comparison with Si	Kelly, J.J.; Dorp, D.H. van; Weyher, J.L.
	2008	Thick GaN layers grown by HVPE: Influence of the templates	Ashraf, H.; Weyher, J.L.; Dreumel, G.W.G. van; Gzregorzyck, A.; Hageman, P.R.
	2008	Influence of sapphire annealing in trimethylaluminum atmosphere on GaN epitaxy by MOCVD	Grzegorczyk, A.P.; Weyher, J.L.; Hageman, P.R.; Larsen, P.K.
	2007	Defect-selective etching of semiconductors	Weyher, J.L.; Kelly, J.J.; Doering, Robert; Nishi, Yoshio
	2007	L’erosion nanoscopique	Montgomery, P.C.; Weyher, J.L.; Gex, Jean-Pierre
	2007	The influence of free-carrier concentration on the PEC etching of GaN: a calibration with Raman spectroscopy	Lewandowska, R.; Weyher, J.L.; Kelly, J.J.; Konczewicz, L.; Lucznik, B.
	2007	Orthodox etching of HVPE-grown GaN	Weyher, J.L.; Lazar, S.; Macht, L.; Liliental-Weber, Z.; Molnar, R.J.; Müller, S.; Sivel, V.G.M.; Nowak, G.; Grzegory, I.
	2007	Anodic etching of SiC in alkaline solutions	Dorp, D.H. van; Weyher, J.L.; Kelly, J.J.; Micromech, J.
	2007	Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates	Rudzinski, M.; Jezierska, E.; Weyher, J.L.; Macht, L.; Hageman, P.R.; Borysiuk, J.; Rodle, T.C.; Jos, H.F.F.
	2006	Etching, Raman and PL study of thick HVPE-grown GaN	Weyher, J.L.; Lewandowska, R.; Macht, L.J.; Lucznik, B.; Grzegory, I.
	2006	Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods	Weyher, J.L.
	2006	Selective etching of dislocations in violet-laser diode structures	Kamler, G.; Smalc, J.; Wozniak, M.; Weyher, J.L.; Czernecki, R.; Targowski, G.; Leszczynski, M.; Grzegory, I.; Porowski, S.
	2005	An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology	Macht, L.J.; Kelly, J.J.; Weyher, J.L.; Grzegorczyk, A.P.; Larsen, P.K.
	2005	Electrochemistry and etching of wide bandgap chemically resistant semiconductors	Kelly, J.J.; Macht, L.J.; Dorp, D.H. van; Kooijman, M.R.; Weyher, J.L.
	2005	Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition	Macht, L.J.; Weyher, J.L.; Grzegorczyk, A.P.; Larsen, P.K.
	2005	Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD	Grzegorczyk, A.P.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2005	Defects in GaN single crystals and homoepitaxial structures	Weyher, J.L.; Kamler, G.; Nowak, G.; Borysiuk, J.; Lucznik, B.; Krysko, M.; Grzegory, I.; Porowski, S.
	2005	Defect-selective etching of SiC	Weyher, J.L.; Lazar, S.; Borysiuk, J.; Pernot, J.
	2005	Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers	Kamler, G.; Borysiuk, J.; Weyher, J.L.; Czernecki, R.; Leszczynski, M.; Grzegory, I.; Porowski, S.
	2005	Growth of AlN, GaN and InN from the solution	Krukowski, S.; Grzegory, I.; Bockowski, M.; Lucznik, B.; Suski, T.; Nowak, G.; Borysiuk, J.; Wroblewski, M.; Leszczynski, M.; Perlin, P.; Porowski, S.; Weyher, J.L.
	2005	Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2005	Revealing of defects in CdTe crystals by DSL etching	Bissoli, F.; Weyher, J.L.; Zappettini, A.; Zha, M.; Zanotti, L.
	2004	Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods	Weyher, J.L.; Macht, L.J.
	2004	Low dislocation density, high power InGaN laser diodes	Perlin, P.; Leszczynski, M.; Prystawko, P.; Wisniewski, P.; Czernetzki, R.; Skierbiszewski, C.; Nowak, G.; Purgal, W.; Weyher, J.L.; Kamler, G.; Borysiuk, J.; Krysko, M.; Sarzynski, M.; Suski, T.; Litwin-Staszewska, E.; Dmowski, L.; Franssen, G.M.; Grzanka, S.; Swietlik, T.; Grzegory, I.; Bockowski, M.; Lucznik, B.; Porowski, S.; Gorczyca, L.; Bering, A.; Krupczynski, W.; Makarowa, I.; Wisniewska, R.; Libura, A.
	2004	TEM observation of nanopipes in heteroepitaxial GaN	Jezierska, E.; Weyher, J.L.; Rudzinski, M.; Borysiuk, J.
	2004	Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures	Kamler, G.; Borysiuk, J.; Weyher, J.L.; Presz, A.; Wozniak, M.; Grzegory, I.
	2004	Nanopipes in GaN: photo-etching and TEM study	Lazar, S.; Weyher, J.L.; Macht, L.J.; Tichelaar, F.D.; Zandbergen, H.W.

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