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Full Text	Issue Date	Title	Author(s)
	2012	Ultra-thin, high performance tunnel junctions gor iii-v multijunction cells	Bauhuis, G.J.; Mulder, P.; Schermer, J.
	2012	Broadband and omnidirectional anti-reflection layer for iii/v multi-junction solar cells	Diedenhofen, S.L.; Grzela, G.; Haverkamp, E.; Bauhuis, G.J.; Schermer, J.J.; Rivas, J.G.
	2012	Anomalous iv-characteristics of a gaas solar cell under high irradiance	Bissels, G.M.M.W.; Asselbergs, M.A.H.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Vlieg, E.; Schermer, J.J.
	2010	InGaP/GaAs inverted dual junction solar cells for CPV applications using metal-backed epitaxial lift-off	Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Schermer, J.J.; Nash, L.J.; Fulgoni, D.J.F.; Ballard, I.M.; Duggan, G.
	2009	26.1% thin film gaas solar cell using epitaxial lift-off	Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Huijben, J.C.C.M.; Schermer, J.J.
	2009	Wafer reuse for repeated growth of iii-v solar cells	Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Schermer, J.J.; Bongers, E.; Oomen, G.; Koestler, W.; Strobl, G.
	2008	HF species and Dissolved oxygen on the epitaxial lift-off process of GaAs using AlAsP Release Layers	Niftrik, A.T.J. van; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.; Setten, M.J. van; Attema, J.J.; Tan, N.C.G.; Kelly, J.J.
	2007	Substrate reuse for epitaxial llift-off of III-V solar cellls	Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Schermer, J.J.
	2007	On the development of high efficiency thin-film GaAs and GaInP2 cells	Deelen, J. van; Bauhuis, G.J.; Schermer, J.J.; Mulder, P.; Haverkamp, E.; Larsen, P.K.
	2007	A diffusion and reaction related model of the epitaxial lift-off process	Niftrik, A.T.J. van; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.; Kelly, J.J.
	2007	The influence of InxGa1 xAs and GaAs1 yPy layers surrounding the AlAs release layer in the epitaxial lift-off	Niftrik, A.T.J. van; Bauhuis, G.J.; Schermer, J.J.; Deelen, J. van; Mulder, P.; Larsen, P.K.
	2007	Multi junction spectral response measurement setup based on high power leds for subcell selection	Haverkamp, E.; Bauhuis, G.J.; Bissels, G.M.M.W.; Mulder, P.; Schermer, J.J.
	2007	Optimum bandgap calculations for a 4-terminal double tandem III-V concentrator solar cell structure	Bissels, G.M.M.W.; Schermer, J.J.; Haverkamp, E.; Mulder, P.; Bauhuis, G.J.
	2006	Study of wet chemical etching of AlxGa1-xInP2 films using hydrochloric acid	Deelen, J. van; Mulder, P.; Bauhuis, G.J.; Niftrik, A.T.J. van; Haverkamp, E.; Schermer, J.J.; Larsen, P.K.
	2006	Electrochemical-chemical deposition and etching - Study of wet chemical of AlxGa1-xInP2 films using hydrochloric Acid	Deelen, J. van; Mulder, P.; Bauhuis, G.J.; Niftrik, A.T.J. van; Haverkamp, E.; Schermer, J.J.; Larsen, P.K.
	2006	Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off	Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.
	2006	Quantitative analysis of variant IIICuAu-I-type ordering of AlxGa1-xAs on (110), (111)A and (001) GaAs substrates using X-ray diffraction	Niftrik, A.T.J. van; Bauhuis, G.J.; Schermer, J.J.; Kim, H.; Voncken, M.M.J.; Mulder, P.; Larsen, P.K.
	2006	Synchrotron radiation study of order in AlxGa1-xAs	Niftrik, A.T.J. van; Bauhuis, G.J.; Schermer, J.J.; Kim, H.; Voncken, M.M.J.; Mulder, P.; Larsen, P.K.
	2005	Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1-xAs	Deelen, J. van; Bauhuis, G.J.; Schermer, J.J.; Larsen, P.K.
	2005	Epitaxial Lift-Off for large area thin film III/V devices	Schermer, J.J.; Mulder, P.; Bauhuis, G.J.; Voncken, M.; Deelen, J. van; Haverkamp, E.; Larsen, P.K.
	2005	Thin-film GaAs epitaxial life-off solar cells for space applications	Schermer, J.J.; Mulder, P.; Bauhuis, G.J.; Larsen, P.K.; Oomen, G.; Bongers, E.
	2004	Parameter study of intrinsic carbon doping of AlxGa1-xAs by MOCVD	Deelen, J. van; Bauhuis, G.J.; Schermer, J.J.; Larsen, P.K.
	2004	Thin film GaAs solar cells with increased quantum efficiency due to light reflection	Bauhuis, G.J.; Schermer, J.J.; Mulder, P.; Voncken, M.M.J.; Larsen, P.K.
	2004	Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process	Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.
	2004	Etching AlAs with HF for epitaxial lift-off applications	Voncken, M.M.J.; Schermer, J.J.; Niftrik, A.T.J. van; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.; Peters, T.P.J.; Bruin, B. de; Klaassen, A.; Kelly, J.J.
	2004	Strain-accelerated HF etching of AlAs for epitaxial lift-off	Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Niftrik, A.T.J. van; Larsen, P.K.
	1997	Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate	Geelen, A. van; Hageman, P.R.; Bauhuis, G.J.; Rijsingen, P.C. van; Schmidt, P.; Giling, L.J.
	1996	Interface-induced conversion of infrared to visible light at semiconductor interfaces	Driessen, F.A.J.M.; Cheong, H.M.; Mascarenhas, A.; Deb, S.K.; Hageman, P.R.; Bauhuis, G.J.; Giling, L.J.
	1995	Homoepitaxial Diamond Films Codoped with Phosphorus and Nitrogen by Chemical-Vapor Deposition	Cao, G.Z.; Driessen, F.A.J.M.; Bauhuis, G.J.; Giling, L.J.; Alkemade, P.F.A.

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