DSpace at RU >

Search Results

Results 1-11 of 11.

Item hits:

Full Text	Issue Date	Title	Author(s)
	2008	Influence of sapphire annealing in trimethylaluminum atmosphere on GaN epitaxy by MOCVD	Grzegorczyk, A.P.; Weyher, J.L.; Hageman, P.R.; Larsen, P.K.
	2006	Method for HVPE growth of thick crack-free GaN layers	Dam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R.; Larsen, P.K.
	2006	GaN grown on sapphire by MOCVD : material for HEMT structures	Grzegorczyk, Andrzej Pawel
	2005	An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology	Macht, L.J.; Kelly, J.J.; Weyher, J.L.; Grzegorczyk, A.P.; Larsen, P.K.
	2005	Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC	Ochalski, T.J.; Grzegorczyk, A.P.; Rudzinski, M.; Larsen, P.K.; Holtz, P.O.; Bergman, P.; Paskov, P.P.
	2005	Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition	Macht, L.J.; Weyher, J.L.; Grzegorczyk, A.P.; Larsen, P.K.
	2005	Resistivity control of unintentionally doped GaN films	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Rudzinski, M.; Larsen, P.K.
	2005	Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD	Grzegorczyk, A.P.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2005	Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD	Rudzinski, M.; Hageman, P.R.; Grzegorczyk, A.P.; Macht, L.J.; Rodle, T.C.; Jos, H.F.F.; Larsen, P.K.
	2005	Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2004	The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations	Dam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R.; Dorsman, R.; Kleijn, C.R.; Larsen, P.K.

1