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Full Text	Issue Date	Title	Author(s)
	2006	Etching, Raman and PL study of thick HVPE-grown GaN	Weyher, J.L.; Lewandowska, R.; Macht, L.J.; Lucznik, B.; Grzegory, I.
	2005	Extended defects in GaN : selective etching and optical properties	Macht, Lukasz Jerzy
	2005	An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology	Macht, L.J.; Kelly, J.J.; Weyher, J.L.; Grzegorczyk, A.P.; Larsen, P.K.
	2005	Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates	Macht, L.J.; Hageman, P.R.; Haffouz, S.; Larsen, P.K.
	2005	Electrochemistry and etching of wide bandgap chemically resistant semiconductors	Kelly, J.J.; Macht, L.J.; Dorp, D.H. van; Kooijman, M.R.; Weyher, J.L.
	2005	Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition	Macht, L.J.; Weyher, J.L.; Grzegorczyk, A.P.; Larsen, P.K.
	2005	Resistivity control of unintentionally doped GaN films	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Rudzinski, M.; Larsen, P.K.
	2005	Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD	Rudzinski, M.; Hageman, P.R.; Grzegorczyk, A.P.; Macht, L.J.; Rodle, T.C.; Jos, H.F.F.; Larsen, P.K.
	2005	Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2004	Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods	Weyher, J.L.; Macht, L.J.
	2004	Nanopipes in GaN: photo-etching and TEM study	Lazar, S.; Weyher, J.L.; Macht, L.J.; Tichelaar, F.D.; Zandbergen, H.W.

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