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Full Text	Issue Date	Title	Author(s)
	2008	Influence of sapphire annealing in trimethylaluminum atmosphere on GaN epitaxy by MOCVD	Grzegorczyk, A.P.; Weyher, J.L.; Hageman, P.R.; Larsen, P.K.
	2008	HF species and Dissolved oxygen on the epitaxial lift-off process of GaAs using AlAsP Release Layers	Niftrik, A.T.J. van; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.; Setten, M.J. van; Attema, J.J.; Tan, N.C.G.; Kelly, J.J.
	2007	Screening effect in contactless elecrtoreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas	Motyka, M.; Kudrawiec, R.; Syperek, M.; Misiewics, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2007	Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates	Pernot, J.; Bustarret, E.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2007	On the development of high efficiency thin-film GaAs and GaInP2 cells	Deelen, J. van; Bauhuis, G.J.; Schermer, J.J.; Mulder, P.; Haverkamp, E.; Larsen, P.K.
	2007	Influence of In on the surface morphology of HYPE grown GaN	Dam, C.E.C.; Hageman, P.R.; Enckevort, W.J.P. van; Bohnen, T.; Larsen, P.K.
	2007	Investigation of built-in electric fields in AlGaN/GaN heterostructures grown on misoriented 4H-SiC substrate by contactless electroreflectance	Syperek, M.; Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2007	Scaling up a horizontal HVPE reactor	Dam, C.E.C.; Bohnen, T.; Kleijn, C.R.; Hageman, P.R.; Larsen, P.K.
	2007	A diffusion and reaction related model of the epitaxial lift-off process	Niftrik, A.T.J. van; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.; Kelly, J.J.
	2007	The influence of InxGa1 xAs and GaAs1 yPy layers surrounding the AlAs release layer in the epitaxial lift-off	Niftrik, A.T.J. van; Bauhuis, G.J.; Schermer, J.J.; Deelen, J. van; Mulder, P.; Larsen, P.K.
	2007	Influence of In on the growth mechanism of GaN in HVPE	Dam, C.E.C.; Hageman, P.R.; Enckevort, W.J.P. van; Bohnen, T.; Larsen, P.K.
	2006	Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition	Tengborn, E.; Rummukainen, M.; Tuomisto, F.; Saarinen, K.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.; Nordlund, A.
	2006	Investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy	Motyka, M.; Syperek, M.; Kudrawiec, R.; Misiewicz, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2006	Method for HVPE growth of thick crack-free GaN layers	Dam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R.; Larsen, P.K.
	2006	Study of wet chemical etching of AlxGa1-xInP2 films using hydrochloric acid	Deelen, J. van; Mulder, P.; Bauhuis, G.J.; Niftrik, A.T.J. van; Haverkamp, E.; Schermer, J.J.; Larsen, P.K.
	2006	Electrochemical-chemical deposition and etching - Study of wet chemical of AlxGa1-xInP2 films using hydrochloric Acid	Deelen, J. van; Mulder, P.; Bauhuis, G.J.; Niftrik, A.T.J. van; Haverkamp, E.; Schermer, J.J.; Larsen, P.K.
	2006	Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off	Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.
	2006	Quantitative analysis of variant IIICuAu-I-type ordering of AlxGa1-xAs on (110), (111)A and (001) GaAs substrates using X-ray diffraction	Niftrik, A.T.J. van; Bauhuis, G.J.; Schermer, J.J.; Kim, H.; Voncken, M.M.J.; Mulder, P.; Larsen, P.K.
	2006	Synchrotron radiation study of order in AlxGa1-xAs	Niftrik, A.T.J. van; Bauhuis, G.J.; Schermer, J.J.; Kim, H.; Voncken, M.M.J.; Mulder, P.; Larsen, P.K.
	2006	Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers	Desmaris, V.; Rudzinski, M.; Rorsman, N.; Hageman, P.R.; Larsen, P.K.; Zirath, H.; Rodle, T.C.; Jos, H.F.F.
	2005	An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology	Macht, L.J.; Kelly, J.J.; Weyher, J.L.; Grzegorczyk, A.P.; Larsen, P.K.
	2005	Photoreflectance investigations of a donor-related transition in AlGaN/GaN transistor structures	Kudrawiec, R.; Syperek, M.; Misiewicz, J.; Rudzinski, M.; Grezegorczyk, A.P.; Hageman, P.R.; Larsen, P.K.
	2005	Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates	Macht, L.J.; Hageman, P.R.; Haffouz, S.; Larsen, P.K.
	2005	Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC	Ochalski, T.J.; Grzegorczyk, A.P.; Rudzinski, M.; Larsen, P.K.; Holtz, P.O.; Bergman, P.; Paskov, P.P.
	2005	Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition	Macht, L.J.; Weyher, J.L.; Grzegorczyk, A.P.; Larsen, P.K.
	2005	Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study	Dam, C.E.C.; Hageman, P.R.; Larsen, P.K.
	2005	Resistivity control of unintentionally doped GaN films	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Rudzinski, M.; Larsen, P.K.
	2005	Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD	Grzegorczyk, A.P.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2005	Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD	Rudzinski, M.; Hageman, P.R.; Grzegorczyk, A.P.; Macht, L.J.; Rodle, T.C.; Jos, H.F.F.; Larsen, P.K.
	2005	Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1-xAs	Deelen, J. van; Bauhuis, G.J.; Schermer, J.J.; Larsen, P.K.
	2005	Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2005	Epitaxial Lift-Off for large area thin film III/V devices	Schermer, J.J.; Mulder, P.; Bauhuis, G.J.; Voncken, M.; Deelen, J. van; Haverkamp, E.; Larsen, P.K.
	2005	Thin-film GaAs epitaxial life-off solar cells for space applications	Schermer, J.J.; Mulder, P.; Bauhuis, G.J.; Larsen, P.K.; Oomen, G.; Bongers, E.
	2004	The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations	Dam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R.; Dorsman, R.; Kleijn, C.R.; Larsen, P.K.
	2004	Parameter study of intrinsic carbon doping of AlxGa1-xAs by MOCVD	Deelen, J. van; Bauhuis, G.J.; Schermer, J.J.; Larsen, P.K.
	2004	Thin film GaAs solar cells with increased quantum efficiency due to light reflection	Bauhuis, G.J.; Schermer, J.J.; Mulder, P.; Voncken, M.M.J.; Larsen, P.K.
	2004	Multiple release layer study of the intrinsic lateral etch rate of the epitaxial lift-off process	Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.
	2004	Etching AlAs with HF for epitaxial lift-off applications	Voncken, M.M.J.; Schermer, J.J.; Niftrik, A.T.J. van; Bauhuis, G.J.; Mulder, P.; Larsen, P.K.; Peters, T.P.J.; Bruin, B. de; Klaassen, A.; Kelly, J.J.
	2004	Strain-accelerated HF etching of AlAs for epitaxial lift-off	Voncken, M.M.J.; Schermer, J.J.; Bauhuis, G.J.; Niftrik, A.T.J. van; Larsen, P.K.

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