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Full Text	Issue Date	Title	Author(s)
	2011	Contactless electroreflectance of algan/gan heterostructures deposited on c-, a-, m-, and (20.1)-plane gan bulk substrates grown by ammonothermal method	Kudrawiec, R.; Rudzinski, M.; Gladysiewicz, M.; Janicki, L.; Hageman, P.R.; Strupinski, W.; Misiewicz, J.; Kucharski, R.; Zajac, M.; Doradzinski, R.; Dwilinski, R.
	2011	Realising epitaxial growth of GaN on (001) diamond	Dreumel, G.W.G. van; Tinnemans, P.T.; Heuvel, A.A.J. van den; Bohnen, T.; Buijnsters, J.G.; Meulen, J.J. ter; Enckevort, W.J.P. van; Hageman, P.R.; Vlieg, E.
	2010	Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment	Ashraf, H.; Sridhara Rao, D.V.; Gogova, D.; Siche, D.; Fornari, R.; Humphreys, C.J.; Hageman, P.R.
	2010	Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism	Ashraf, H.; Kudrawiec, R.; Weyher, J.L.; Serafinczuk, J.; Misiewicz, J.; Hageman, P.R.
	2010	Interface state density of free-standing GaN Schottky diodes	Faraz, S.M.; Ashraf, H.; Arshad, M.I.; Hageman, P.R.; Asghar, M.; Wahab, Q.
	2010	Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy	Ashraf, H.; Arshad, M.I.; Faraz, S.M.; Wahab, Q.; Hageman, P.R.; Asghar, M.
	2010	Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE	Bohnen, T.; Ashraf, H.; Dreumel, G.W.G. van; Weyher, J.L.; Hageman, P.R.; Vlieg, E.; Verhagen, Sjoerd
	2010	The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates	Bohnen, T.; Dreumel, G.W.G. van; Weyher, J.L.; Enckevort, W.J.P. van; Ashraf, H.; Jong, A.E.F. de; Hageman, P.R.; Vlieg, E.
	2010	Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates	Dreumel, G.W.G. van; Bohnen, T.; Buijnsters, J.G.; Enckevort, W.J.P. van; Meulen, J.J. ter; Hageman, P.R.; Vlieg, E.
	2010	The nucleation of HCl and Cl<sub>2</sub>-based HVPE GaN on mis-oriented sapphire substrates	Bohnen, T.; Dreumel, G.W.G. van; Weyher, J.L.; Enckevort, W.J.P. van; Ashraf, H.; Jong, A.E.F. de; Hageman, P.R.; Vlieg, E.
	2009	Reduction of dislocation density in epitaxial gan layers bij overgrowth of defect-related etch pits	Weyher, J.L.; Ashraf, H.; Hageman, P.R.
	2009	Growth of GaN on nano-crystalline diamond substrates	Dreumel, G.W.G. van; Buijnsters, J.G.; Bohnen, T.; Meulen, J.J. ter; Hageman, P.R.; Enckevort, W.J.P. van; Vlieg, E.
	2009	Growth of scandium aluminum nitride nanowires on scn(111) films on 6h-sic substrates by HVPE	Bohnen, T.; Dreumel, G.W.G. van; Hageman, P.R.; Algra, R.E.; Enckevort, W.J.P. van; Vlieg, E.; Verheijen, M.A.; Edgar, J.H.
	2009	Scaln nanowires: A cathodoluminescence study	Bohnen, T.; Yazdi, G.R.; Yakimova, R.; Dreumel, G.W.G. van; Hageman, P.R.; Vlieg, E.; Algra, R.E.; Verheijen, M.A.; Edgar, J.H.
	2009	On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes	Bohnen, T.; Jong, A.E.F de; Enckevort, W.J.P. van; Weyher, J.; Dreumel, G.W.G. van; Ashraf, H.; Hageman, P.R.; Vlieg, E.
	2008	Thick GaN layers grown by HVPE: Influence of the templates	Ashraf, H.; Weyher, J.L.; Dreumel, G.W.G. van; Gzregorzyck, A.; Hageman, P.R.
	2008	Influence of sapphire annealing in trimethylaluminum atmosphere on GaN epitaxy by MOCVD	Grzegorczyk, A.P.; Weyher, J.L.; Hageman, P.R.; Larsen, P.K.
	2008	HVPE of scandium nitride on 6H-SiC(0001)	Edgar, J.H.; Bohnen, T.; Hageman, P.R.
	2008	Influence of the Structural and Compositional Properties of PECVD Silicon Nitride Layers on the Passivaton of AlGaN/GaN HRMT's	Karouta, F.K.; Kramer, M.C.J.C.M; Kwaspen, A.; Grzegorczyk, A.; Hageman, P.R.; Hoex, B.; Kessels, W.M.M.; Klootwijk, J.; Timmering, E.; Smit, M.K.
	2007	Screening effect in contactless elecrtoreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas	Motyka, M.; Kudrawiec, R.; Syperek, M.; Misiewics, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2007	Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates	Pernot, J.; Bustarret, E.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2007	Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates	Rudzinski, M.; Jezierska, E.; Weyher, J.L.; Macht, L.; Hageman, P.R.; Borysiuk, J.; Rodle, T.C.; Jos, H.F.F.
	2007	Influence of In on the surface morphology of HYPE grown GaN	Dam, C.E.C.; Hageman, P.R.; Enckevort, W.J.P. van; Bohnen, T.; Larsen, P.K.
	2007	Investigation of built-in electric fields in AlGaN/GaN heterostructures grown on misoriented 4H-SiC substrate by contactless electroreflectance	Syperek, M.; Motyka, M.; Kudrawiec, R.; Misiewicz, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2007	Scaling up a horizontal HVPE reactor	Dam, C.E.C.; Bohnen, T.; Kleijn, C.R.; Hageman, P.R.; Larsen, P.K.
	2007	Influence of In on the growth mechanism of GaN in HVPE	Dam, C.E.C.; Hageman, P.R.; Enckevort, W.J.P. van; Bohnen, T.; Larsen, P.K.
	2006	Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition	Tengborn, E.; Rummukainen, M.; Tuomisto, F.; Saarinen, K.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.; Nordlund, A.
	2006	Investigations of GaN surface quantum well in AlGaN/GaN transistor heterostructures by contactless electroreflectance spectroscopy	Motyka, M.; Syperek, M.; Kudrawiec, R.; Misiewicz, J.; Rudzinski, M.; Hageman, P.R.; Larsen, P.K.
	2006	Method for HVPE growth of thick crack-free GaN layers	Dam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R.; Larsen, P.K.
	2006	Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers	Desmaris, V.; Rudzinski, M.; Rorsman, N.; Hageman, P.R.; Larsen, P.K.; Zirath, H.; Rodle, T.C.; Jos, H.F.F.
	2005	Photoreflectance investigations of a donor-related transition in AlGaN/GaN transistor structures	Kudrawiec, R.; Syperek, M.; Misiewicz, J.; Rudzinski, M.; Grezegorczyk, A.P.; Hageman, P.R.; Larsen, P.K.
	2005	Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates	Macht, L.J.; Hageman, P.R.; Haffouz, S.; Larsen, P.K.
	2005	Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study	Dam, C.E.C.; Hageman, P.R.; Larsen, P.K.
	2005	Resistivity control of unintentionally doped GaN films	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Rudzinski, M.; Larsen, P.K.
	2005	Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD	Grzegorczyk, A.P.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2005	Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD	Rudzinski, M.; Hageman, P.R.; Grzegorczyk, A.P.; Macht, L.J.; Rodle, T.C.; Jos, H.F.F.; Larsen, P.K.
	2005	Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN	Tuomisto, F.; Saarinen, K.; Lucznik, B.; Grzegory, I.; Teisseyre, H.; Suski, T.; Porowski, S.; Hageman, P.R.; Likonen, J.
	2005	Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD	Grzegorczyk, A.P.; Macht, L.J.; Hageman, P.R.; Weyher, J.L.; Larsen, P.K.
	2004	n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy	Hageman, P.R.; Schaff, W.J.; Janinski, J.; Lilienthal-Weber, Z.
	2004	Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy	Jursenas, S.; Miasojedovas, S.; Kurilcik, G.; Zukauskas, A.; Hageman, P.R.
	2004	The effect of HVPE reactor geometry on GaN growth rate - experiments versus simulations	Dam, C.E.C.; Grzegorczyk, A.P.; Hageman, P.R.; Dorsman, R.; Kleijn, C.R.; Larsen, P.K.
	1997	Dependence of impurity incorporation upon substrate misorientation during GaAs growth by metalorganic vapour phase epitaxy	Hageman, P.R.; Nijenhuis, J. te; Anders, M.J.; Giling, L.J.
	1997	Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate	Geelen, A. van; Hageman, P.R.; Bauhuis, G.J.; Rijsingen, P.C. van; Schmidt, P.; Giling, L.J.
	1997	Temperature dependence on the emerging crystal habit of GaInP deposited on nonplanar {001}GaAs substrates	Bastos, P.L.; Anders, M.J.; Bongers, M.M.G.; Hageman, P.R.; Giling, L.J.
	1996	Interface-induced conversion of infrared to visible light at semiconductor interfaces	Driessen, F.A.J.M.; Cheong, H.M.; Mascarenhas, A.; Deb, S.K.; Hageman, P.R.; Bauhuis, G.J.; Giling, L.J.
	1996	Dependence of indium incorporation upon the substrate misorientation during growth of In(x)Ga(1)1-xAs by metalorganic vapour phase epitaxy	Nijenhuis, J. te; Hageman, P.R.; Giling, L.J.
	1995	Photoluminescence of Modulation-Doped Ordered Disordered Galnp(2) Homojunctions - Intrinsic Versus Extrinsic Emissions	Driessen, F.A.J.M.; Hageman, P.R.; Olsthoorn, S.M.; Giling, L.J.

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