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Full Text	Issue Date	Title	Author(s)
	2007	Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates	Rudzinski, M.; Jezierska, E.; Weyher, J.L.; Macht, L.; Hageman, P.R.; Borysiuk, J.; Rodle, T.C.; Jos, H.F.F.
	2006	Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers	Desmaris, V.; Rudzinski, M.; Rorsman, N.; Hageman, P.R.; Larsen, P.K.; Zirath, H.; Rodle, T.C.; Jos, H.F.F.
	2005	Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD	Rudzinski, M.; Hageman, P.R.; Grzegorczyk, A.P.; Macht, L.J.; Rodle, T.C.; Jos, H.F.F.; Larsen, P.K.

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